| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ultra-high speed thin-film transistor that responds to a GHz-band high-frequency signal without being made compact to a size for which high processing precision is needed. <P>SOLUTION: A thin-film metal layer is formed which is laminated on a semiconductor layer, Schottky-junctioned with the semiconductor layer and has a film thickness of ≤100 nm, a modulated voltage or modulated light is applied to the thin-film metal layer to generate a response current responding to the modulated voltage or modulated light between a first electrode and a second electrode which are ohmic-connected with the thin-film metal layer. The thin-film conductive layer in which a carrier travels is a metal layer along a surface of an element, so that the carrier moves at high speed in the thin-film metal layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
