| 摘要 |
<P>PROBLEM TO BE SOLVED: To sufficiently irradiate a resist between elements. <P>SOLUTION: A lithography method of irradiating a resist on a substrate in which a region between a first element located on the substrate and a second element located on the substrate is filled with the resist, the first element has a first length, a first width, and a first height, the second element has a second length, a second width, and a second height, the first height is substantially equal to the second height, the first length is substantially in parallel with the second length, and a distance between opposed side walls of the first and second elements is shorter than the wavelength of radiation used for irradiating the resist, the first and second elements determining a region extended in a first direction and filled with the resist. The method includes a step of irradiating the resist with elliptical polarization radiation that is polarized at the first height and the second height perpendicularly to the first direction and substantially perpendicularly to the first and second lengths. <P>COPYRIGHT: (C)2011,JPO&INPIT |
