发明名称 HEAT TREATMENT APPARATUS
摘要 Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit. The heat treatment apparatus for growing a single crystalline film or polycrystalline films on a plurality of substrates includes a boat configured to hold the plurality of substrates, a cylindrical heat generating material (23) installed to surround the boat and constituting a reaction chamber (32), a reaction tube (21) installed to surround the cylindrical heat generating material, a cylindrical insulating part (25) installed between the cylindrical heat generating material and the reaction tube, a temperature measurement chip (24) installed between the cylindrical heat generating material and the cylindrical insulating part, and a radiation thermometer (42) configured to measure a temperature of the temperature measurement chip, wherein the radiation thermometer is disposed below a lower end of the reaction tube.
申请公布号 US2011204036(A1) 申请公布日期 2011.08.25
申请号 US201113029499 申请日期 2011.02.17
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MUROBAYASHI MASAKI;YAMAGUCHI TAKATOMO;SHIRAKO KENJI;SAIDO SHUHEI;SATO AKIHIRO;HARA DAISUKE
分类号 H05B1/00 主分类号 H05B1/00
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