发明名称 |
SELF-ALIGNED ION IMPLANTATION FOR IBC SOLAR CELLS |
摘要 |
<p>An improved method of doping a substrate is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A paste having a dopant of a first conductivity is applied to the surface of the substrate. This paste serves as a mask for a subsequent ion implantation step, allowing ions of a dopant having an opposite conductivity to be introduced to the portions of the substrate which are exposed. After the ions are implanted, the mask can be removed and the dopants may be activated, Methods of using an aluminum- based and phosphorus-based paste are disclosed.</p> |
申请公布号 |
WO2011103323(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
WO2011US25291 |
申请日期 |
2011.02.17 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;GUPTA, ATUL;BATEMAN, NICHOLAS, P.T. |
发明人 |
GUPTA, ATUL;BATEMAN, NICHOLAS, P.T. |
分类号 |
H01L21/225;H01L21/265;H01L21/266 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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