发明名称 |
SRAM CELL WITH T-SHAPED CONTACT |
摘要 |
An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater than 10 percent of a separation distance between ends of opposite drain connecting segments. The drain connecting segments may also extend beyond gate connecting segments by a distance greater than one-third of the width of the gate connecting segments. A process of forming an integrated circuit containing an array of SRAM cells with T-shaped contacts in which drain connecting segments may extend beyond gate connecting segments by a distance greater than 10 percent of a separation distance between ends of opposite drain connecting segments. A process may also form the drain connecting segments to extend beyond gate connecting segments by greater than one-third of the width of the gate connecting segments. |
申请公布号 |
US2011204452(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US201113044628 |
申请日期 |
2011.03.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOUSTON THEODORE W.;ATON THOMAS J.;JESSEN SCOTT W. |
分类号 |
H01L27/11 |
主分类号 |
H01L27/11 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|