| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device having an open bitline structure from which an edge dummy memory cell block is removed. <P>SOLUTION: The semiconductor memory device is equipped with: the memory cell block including a memory cell array; an edge sense amplification block including one or more first sense amplifiers, each first sense amplifier having a first bitline, a first complementary bitline, and a first amplification circuit comprising a first transistor having a first size; a central sense amplification block including one or more second sense amplifiers, each second sensor amplifier having a second bitline, a second complementary bitline, and a second amplification circuit comprising a second transistor having a second size different each other from the first size; and a capacitor block including at least one capacitor while electrically being connected with the edge sense amplification block. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
