| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wiring film structure forming an air gap without impairing conduction reliability of a wire, and reduced in inter-wire capacitance C. SOLUTION: This method of manufacturing this semiconductor device includes: a first insulation film formation process of forming a first insulation film; a wiring film formation process of forming a wiring film on the first insulation film; a dry etching process of forming, by dry etching, a groove on the first insulation film at a part without being formed with the wiring film; and a second insulation film formation process of forming a second insulation film on the wiring film and the groove not to fill the groove after the dry etching process. COPYRIGHT: (C)2011,JPO&INPIT
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