SILICON CARBIDE INSULATED GATE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME

摘要

The termination structure of the disclosed is a silicon carbide insulated gate semiconductor element (100) is provided with: a semiconductor layer (132) of a first conductivity type, which has a first primary surface (137); a gate electrode (142); and source wiring (101). Therein, a body region (133) of a second conductivity type, a source region (134) of the first conductivity type, a contact region (135) of the second conductivity type and a peripheral RESURF region (105) are provided within the semiconductor layer (132), and the part of the peripheral RESURF region (105) that does not include the body region (133) has a width of at least 1/2 the thickness of the semiconductor layer (132). As a result, it is possible to provide a high-voltage, high-performance silicon carbide insulated gate semiconductor element (100).