| 摘要 |
PURPOSE: A semiconductor light emitting device and a method of manufacturing thereof, and a light emitting device package are provided to improve the yield of a manufacturing process by performing etching process after a laser processing. CONSTITUTION: In a semiconductor light emitting device and a method of manufacturing thereof, and a light emitting device package, a light emitting structure(135) comprises a first conductivity type semiconductor layer(110), an active layer(120), and a second conductive type semiconductor layer(130). A channel layer(140) is formed with a light-transmissive insulating layer or a light-transmissive conductive layer. An electrode layer(150) is formed on the inner bottom of the second conductive type semiconductor layer. A conductive support member(160) is formed in the lower part of a second electrode layer. A bur member(201) is formed outside the conductive support member. |
