NONVOLATILE MEMORY DEVICE, PROGRAMMING METHOD THEREOF AND MEMORY SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A nonvolatile memory device, a programming method thereof and a memory system including the same are provided to reduce leakage between a channel voltage and a bit line voltage by applying a positive voltage to a selected bit line in programming. CONSTITUTION: In a nonvolatile memory device, a programming method thereof and a memory system including the same, a first voltage is applied to a selection bit line(S110). A second voltage is applied to a non-selection bit line(S120). A third voltage is applied to the string selection line corresponding to a selected memory cell. A fourth voltage is applied to the string selection line corresponding to an unselected memory cell. A program operating voltage is applied to the word lines(S130). The first to third voltage is a positive voltage.