<p>An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.</p>
申请公布号
EP2360489(A1)
申请公布日期
2011.08.24
申请号
EP20100152688
申请日期
2010.02.04
申请人
NXP B.V.
发明人
VANHELMONT, FREDERIK WILLEM MAURITS;ISLER, MARK;JANSMAN, ANDREAS BERNARDUS MARIA;WOLTERS, ROBERTUS ANDRIANUS MARIA