| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device is provided to satisfy high speed and reading accuracy by including a reading control circuit. CONSTITUTION: In a nonvolatile semiconductor memory device, a memory device has two electrodes. The discharge speed of charge between two electrodes is different in response to the logic value of stored information. A cell wiring is connected to one side electrode of a memory device. A sense amplifier(7A) has a sense node(SN). The sense node is connected to the cell wiring. A sense amplifier compares the electric potential of the sense node with reference potential. The sense amplifier reads out information logic value. A read control circuit converts a dynamic sense operation and a static sense operation. A dynamic sense operation precharges cell wiring. The cell wiring is charged and discharged through a dynamic sense operation A static sense operation performs reading while connecting current charge to the sense node.
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