| 摘要 |
An alignment key, a method for fabricating the alignment key, and a method for fabricating a thin film transistor substrate using the alignment key are provided. The alignment key includes a base substrate, a first alignment key and a first mark portion of a second alignment key, which are formed on the base substrate using a printing roll, a dielectric that is formed on the base substrate to cover the first alignment key, and a second mark portion of the second alignment key, which is formed on the dielectric and at least partly overlaps the first mark portion of the second alignment key. |
