发明名称 |
Particle beam assisted modification of thin film materials |
摘要 |
Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.
|
申请公布号 |
US8003498(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20080269344 |
申请日期 |
2008.11.12 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
ENGLAND JONATHAN G.;SINCLAIR FRANK;KOO JOHN (BON-WOONG);DORAI RAJESH;GODET LUDOVIC |
分类号 |
H01L21/20;H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|