发明名称 Particle beam assisted modification of thin film materials
摘要 Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.
申请公布号 US8003498(B2) 申请公布日期 2011.08.23
申请号 US20080269344 申请日期 2008.11.12
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 ENGLAND JONATHAN G.;SINCLAIR FRANK;KOO JOHN (BON-WOONG);DORAI RAJESH;GODET LUDOVIC
分类号 H01L21/20;H01L21/36 主分类号 H01L21/20
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