发明名称 |
Method for fabricating a transistor structure |
摘要 |
A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.
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申请公布号 |
US8003475(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20080051928 |
申请日期 |
2008.03.20 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BOECK JOSEF;LACHNER RUDOLF;MEISTER THOMAS;STENGL REINHARD;SCHAEFER HERBERT;SECK MARTIN |
分类号 |
H01L21/331;H01L21/8222;H01L27/082;H01L29/08 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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