发明名称 |
Semiconductor device having a plurality of kinds of wells and manufacturing method thereof |
摘要 |
A semiconductor device has a configuration in which more than three kinds of wells are formed with small level differences. One kind of well from among the more than three kinds of wells has a surface level higher than other kinds of wells from among the more than three kinds of wells. The one kind of well is formed adjacent to and self-aligned to at least one kind of well from among the other kinds of wells. The other kinds of wells are different in one of a conductivity type, an impurity concentration and a junction depth, and include at least two kinds of wells having the same surface level. |
申请公布号 |
US8003476(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20080213676 |
申请日期 |
2008.06.23 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
YOSHIDA MASAAKI;UEDA NAOHIRO;KIJIMA MASATO |
分类号 |
H01L21/331;H01L21/761;H01L21/265;H01L21/8238;H01L21/8239;H01L27/01;H01L27/092 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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