发明名称 |
Trench MOSFETS with ESD Zener diode |
摘要 |
A semiconductor power device with Zener diode for providing an electrostatic discharge (ESD) protection and a thick insulation layer to insulate the Zener diode from a doped body region. The semiconductor power device further includes a Nitride layer underneath the thick oxide layer working as a stopper layer for protecting the thin oxide layer and the body region underneath whereby the over-etch damage and punch-through issues in process steps are eliminated.
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申请公布号 |
US8004009(B2) |
申请公布日期 |
2011.08.23 |
申请号 |
US20090453631 |
申请日期 |
2009.05.18 |
申请人 |
FORCE MOS TECHNOLOGY CO., LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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