METHOD FOR FORMING THIN FILM, METAL WIRING FOR DISPLAY PANEL, THIN FILM TRANSISTOR DISPLAY PANEL INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a thin film in which adhesion of copper to a lower layer is improved without increasing a thickness of an adhesive layer so as to prevent copper from being diffused to the lower layer, and to provide metal wiring for a display panel, a thin film transistor display panel including the same, and a method for manufacturing the same.

SOLUTION: A method for forming the thin film includes forming the thin film on a substrate by a sputtering method at a power density in the range of 1.5 to 3 W/cm2and at a pressure of an inert gas that is in the range of 0.2 to 0.3 Pa. The thin film has an amorphous structure, and is formed of one of titanium, tantalum and molybdenum.

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