| 摘要 |
PURPOSE: A method for manufacturing a silicon carbide semiconductor device is provided to reduce working period and cost by forming a plurality of areas with the other impurity concentration by a mask process and an ion injection process. CONSTITUTION: An implantation mask(4), which consists of a plurality of unit masks, is formed on a silicon carbide semiconductor layer(1). The implantation mask includes a plurality of areas which differently forms the dimension and the arrangement space of the unit mask. The distance from the arbitrary point of the inside of the unit mask to the end part is below the scattering distance in case of injecting a predetermined ion, which is predetermined implant energy, into silicon carbide. The predetermined ion as the predetermined implant energy is injected into the silicon carbide semiconductor layer using the implant mask.
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