发明名称 |
SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm−3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x≦̸1, 0≦̸y≦̸1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0≦̸x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm−3), then d≧1.2×Nd1×10−15+150 is satisfied.
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申请公布号 |
US2011198634(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US201113026564 |
申请日期 |
2011.02.14 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
SASAKI CHIHARU;TAMURA WATARU;AKIYAMA KEITA |
分类号 |
H01L33/26;H01L33/02 |
主分类号 |
H01L33/26 |
代理机构 |
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代理人 |
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地址 |
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