| 摘要 |
An infrared photodetector comprising a thin contact layer substantially transparent to infrared light; an absorption layer positioned such that light admitted through the substantially transparent thin contact area passes through the absorption layer; the absorption layer being configured to utilize resonance to increase absorption efficiency; at least one reflective side wall adjacent to the absorption layer; the at least one reflective side wall being substantially non-parallel to the incident light; the at least one sidewall operating to reflect light into the absorption layer for absorption of infrared radiation; a top contact layer positioned adjacent to the active layer. A method for determining the efficiency of a photodetector configuration using a three-dimensional finite element electromagnetic computer simulation comprising: determining a design configuration geometry, calculating the electromagnetic field distributions, determining a quantum efficiency spectrum at the desired wavelength or wavelength range; whereby to determine the optical effectiveness, a 3-dimensional finite element electromagnetic simulation is carried out to calculate the quantum efficiency of the detector configuration geometry.
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