| 摘要 |
PROBLEM TO BE SOLVED: To bring a source-drain region composed of a silicon mixed crystal layer in an MIS transistor close to a channel region while preventing trouble due to diffusion of an impurity. SOLUTION: A semiconductor device has gate electrodes 13 formed on an n-type active region including a semiconductor substrate 10 with gate insulating films 12 interposed, p-type source-drain regions 20 formed in regions of both sides of the gate electrodes 13 in the active region, and n-type pocket regions 18 formed from side faces of the respective p-type source-drain regions 20 in the active region toward below the gate electrodes 13 respectively. Each of the p-type source-drain regions 20 is composed of a mixed crystal layer of silicon and a group IV element, and the mixed crystal layer has a projection 20a which is formed by protruding the side face of the mixed crystal layer on a gate electrode side in a gate-length direction toward a gate electrode side. A tip of the projection 20a is covered with the pocket region 18. COPYRIGHT: (C)2011,JPO&INPIT
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