STRUCTURAL BODY, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

摘要

Disclosed is a structural body provided with a sapphire base substrate, and a group III nitride semiconductor layer disposed on the base substrate, wherein the upper surface of the base substrate is a crystal plane in which the m-plane <1-100> is tilted at an angle of 0.5° to 4° inclusive in relation to the normal line of the a-plane <11-20> that is orthogonal to the m-plane.