ATOMIC LAYER ETCHING APPARATUS AND ETCHING METHOD USING THE SAME

摘要

PURPOSE: An apparatus and method for etching an atomic layer are provided to etch the atomic layer with various material films by simultaneously removing reactive radical and surface materials of an etched layer using neutral beams. CONSTITUTION: A stage(50) which receives an etched substrate(51) is formed in a reactive chamber(80). A purge gas supply tube(70) is installed on one side of the reactive chamber to supply purge gas. A plasma generator(10) generates neutral beams and reactive radical. A shutter(20) controls the supply of the neutral beam and radical to the reactive chamber. A controller(40) controls the supply of the source gas and purge gas.