| 摘要 |
PURPOSE: A mono-crystal silicon ingot manufacturing apparatus is provided to include an inner crucible in which the mixing of a silicon-melted solution and dopant is effectively processed. CONSTITUTION: A mono-crystal silicon ingot manufacturing apparatus with a continuously growing continuous CZochralski(CCZ) process includes a chamber, a crucible, a susceptor, a heater, and an insulator. The crucible is installed inside of the chamber and includes an inner crucible(200) in order to mix a silicon-melted solution and dopant. The susceptor surrounds the crucible. The heater heats the crucible. The insulator prevents thermal radiation of the heater. The inner crucible includes a hollow hole and a path part connecting with the crucible in lower circumference is opened by multiple divisions. A partition wall(220) is formed as one body with the inner crucible by the path part formation. Both lateral sides of the partition wall have constant slope.
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