发明名称 |
Light Emitting Diode With Metal Piles and Multi-Passivation Layers and Its Manufacturing Method |
摘要 |
The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.
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申请公布号 |
US2011198635(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US20080672404 |
申请日期 |
2008.08.07 |
申请人 |
KIM SANG MOOK;BAEK JONG HYEOB;KIM GANG HO;KANG JUNG-IN;YOM HONG SEO;YU YOUNG MOON |
发明人 |
KIM SANG MOOK;BAEK JONG HYEOB;KIM GANG HO;KANG JUNG-IN;YOM HONG SEO;YU YOUNG MOON |
分类号 |
H01L33/60;H01L33/38;H01L33/46 |
主分类号 |
H01L33/60 |
代理机构 |
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