METHOD FOR FORMING TRENCH OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a trench of a semiconductor device is provided to uniformly deposit a trench oxide layer without a void by performing a heat treatment or depositing an additional oxide layer after a scrubber process for removing particles so that residual moisture is eliminated. CONSTITUTION: A pad oxide layer and a silicon nitride layer are formed on a semiconductor substrate(11). The pad oxide layer, the silicon nitride layer and a predetermined thickness of the semiconductor substrate are selectively etched to form a trench in the semiconductor substrate. A scrubber process is performed to spray water on the front surface of the resultant structure including the trench while the semiconductor substrate rotates. The additional oxide layer(16) is formed on the resultant structure including the trench, and the trench oxide layer(17) is formed on the additional oxide layer to bury the trench. A CMP(chemical mechanical polishing) process is performed on the trench oxide layer until the silicon nitride layer is exposed.