PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE

摘要

Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate 1 containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix 1s, and inversion domains 1t in which the polarity in the <0001> directions is inverted with respect to the matrix 1s; and a step of growing a III-nitride crystal 10 onto the matrix 1s and inversion domains 1t of the undersubstrate 1 by a liquid-phase technique; and is characterized in that a first region 10s, being where the growth rate of III-nitride crystal 10 growing onto the matrix 1s is greater, covers second regions 10t, being where the growth rate of III-nitride crystal 10 growing onto the inversion domains 1t is lesser.