| 发明名称 |
GRADED HIGH GERMANIUM COMPOUND FILMS FOR STRAINED SEMICONDUCTOR DEVICES |
| 摘要 |
<p>Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.</p> |
| 申请公布号 |
EP2356670(A2) |
申请公布日期 |
2011.08.17 |
| 申请号 |
EP20090832392 |
申请日期 |
2009.12.02 |
| 申请人 |
INTEL CORPORATION |
发明人 |
SIMONELLI, DANIELLE;MURTHY, ANAND |
| 分类号 |
H01L21/20;H01L21/336;H01L29/66;H01L29/78 |
主分类号 |
H01L21/20 |
| 代理机构 |
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| 地址 |
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