发明名称 |
Method of manufacturing complementary metal oxide semiconductor transistor |
摘要 |
A method of manufacturing a CMOS is disclosed. A substrate has a first gate and a second gate. A dielectric layer and a patterned photo-resist layer are formed sequentially on the substrate. After an etching process, the dielectric layer without the photo-resist layer forms a spacer around the first gate, and the dielectric layer with the photo-resist layer forms a block layer on the second gate. The recesses are formed in the substrate of two lateral sides of the first gate. The epitaxial silicon layers are formed in the recesses.
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申请公布号 |
US7998821(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20060538815 |
申请日期 |
2006.10.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SHIH HUNG-LIN;CHU TSAN-CHI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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