发明名称 |
Non-volatile memory device and method of controlling a bulk voltage thereof |
摘要 |
A non-volatile memory device comprises a voltage supplier comprising memory cells in which the voltage supplier supplies a positive set voltage to a bulk of a memory cell array at the time of a read operation of the memory cells and a controller for controlling the voltage supplier to set and supply a bulk voltage depending on a number of erase/program cycles of the memory cell array.
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申请公布号 |
US8000154(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20080130931 |
申请日期 |
2008.05.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JANG CHAE KYU;WANG JONG HYUN;YUN SUK;PARK SEONG HUN |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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