发明名称 Non-volatile memory device and method of controlling a bulk voltage thereof
摘要 A non-volatile memory device comprises a voltage supplier comprising memory cells in which the voltage supplier supplies a positive set voltage to a bulk of a memory cell array at the time of a read operation of the memory cells and a controller for controlling the voltage supplier to set and supply a bulk voltage depending on a number of erase/program cycles of the memory cell array.
申请公布号 US8000154(B2) 申请公布日期 2011.08.16
申请号 US20080130931 申请日期 2008.05.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JANG CHAE KYU;WANG JONG HYUN;YUN SUK;PARK SEONG HUN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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