| 摘要 |
A semiconductor device can include a drift region, at least a portion of the drift region located laterally between a drain region and a source region. The drift region can include a first layer having a first doping concentration and a second layer having a second higher doping concentration than the first layer. The second layer of the drift region be configured to allow drift current between the source region and the drain region when a depletion region is formed in at least a portion of the first layer between the source region and the drain region.
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