| 发明名称 |
Semiconductor device fabrication using spacers |
| 摘要 |
A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.
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| 申请公布号 |
US7998808(B2) |
申请公布日期 |
2011.08.16 |
| 申请号 |
US20090409077 |
申请日期 |
2009.03.23 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
VISWANATHAN VIJAY;GIRDHAR DEV ALOK;HENSON TIMOTHY;JONES DAVID PAUL |
| 分类号 |
H01L21/8242;H01L21/20;H01L21/76 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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