发明名称 |
Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same |
摘要 |
A manufacturing method for stacked, non-volatile memory devices provides a plurality of bitline layers and wordline layers with charge trapping structures. The bitline layers have a plurality of bitlines formed on an insulating layer, such as silicon on insulator technologies. The wordline layers are patterned with respective pluralities of wordlines and charge trapping structures orthogonal to the bitlines.
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申请公布号 |
US7999295(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20080337289 |
申请日期 |
2008.12.17 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI ERH-KUN;LUE HANG-TING;HSIEH KUANG-YEU |
分类号 |
H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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