| 摘要 |
<p>PURPOSE: A method for forming a fine pattern is provided to form a hard mask pattern with a narrower line width than that of an exposure resolution limit on the sidewall of a first assistant pattern and form narrower line width than that of the exposure resolution limit by patterning the patterns of a semiconductor device using the hard mask patterns as an etching mask. CONSTITUTION: A first sub layer is formed on a sub layer(1). A second sub layer, which transmits light and has slower diffusion velocity of acid than the first sub layer, is formed on the first sub layer is formed. Acid generates in the exposure areas of the first and the second sub layer by exposing a part area of the first sub layer and the second sub layer. Acid is diffused by a baking process and the diffusion in the first sub layer is faster than that of the second sub layer. First sub patterns(3a) and second sub patterns(5a), which are wider than the first sub patterns, are formed by eliminating the diffusion area of the acid from the first and the second sub layer. The area removed from the first sub-layer is filled with materials for the hard mask. Hard mask patterns(7a) are formed on the sidewall of the first sub patterns by eliminating the materials for the hard mask which are exposed between the second sub patterns.</p> |
