| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for manufacturing the semiconductor device having high quality and high reliability by suppressing the enlargement of a void defect when the semiconductor device is formed by using a laminated substrate. <P>SOLUTION: The manufacturing method of the semiconductor device includes a step for forming a semiconductor substrate by laminating a support substrate and a semiconductor film and a step for forming a semiconductor element on the semiconductor film. The step for forming the semiconductor element includes a step for forming a coating an exposure part of the support substrate which is exposed by the void defect occurring when the support substrate and the semiconductor film are laminated. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
