发明名称 ORGANIC FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THEREOF
摘要 <p>PURPOSE: An organic field effect transistor and a manufacturing method thereof are provided to prevent a nozzle jam when semiconductor layer is formed using two fluid-nozzle and to gate-control by ionic gel which is pattered as small size on a plastic substrate. CONSTITUTION: Source and a drain electrode are formed on a substrate. An organic semiconductor layer is formed on the substrate in which the source and the drain electrode are formed. An insulating layer is formed on the organic semiconductor layer. A gate electrode is formed on the insulating layer. The insulating layer is carbon compound in which predetermined ionic liquid, a diacrylate supporter, and polymerization initiator are dually connected.</p>
申请公布号 KR20110091096(A) 申请公布日期 2011.08.11
申请号 KR20100010756 申请日期 2010.02.05
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 JEONG, UN YOUNG;LEE, SUNG WON
分类号 H01L29/786 主分类号 H01L29/786
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