发明名称 |
ORGANIC FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THEREOF |
摘要 |
<p>PURPOSE: An organic field effect transistor and a manufacturing method thereof are provided to prevent a nozzle jam when semiconductor layer is formed using two fluid-nozzle and to gate-control by ionic gel which is pattered as small size on a plastic substrate. CONSTITUTION: Source and a drain electrode are formed on a substrate. An organic semiconductor layer is formed on the substrate in which the source and the drain electrode are formed. An insulating layer is formed on the organic semiconductor layer. A gate electrode is formed on the insulating layer. The insulating layer is carbon compound in which predetermined ionic liquid, a diacrylate supporter, and polymerization initiator are dually connected.</p> |
申请公布号 |
KR20110091096(A) |
申请公布日期 |
2011.08.11 |
申请号 |
KR20100010756 |
申请日期 |
2010.02.05 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
JEONG, UN YOUNG;LEE, SUNG WON |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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