| 摘要 |
<P>PROBLEM TO BE SOLVED: To hardly cause a sensitivity difference between shared pixels in a solid-state imaging device having shared pixels. <P>SOLUTION: The solid-state imaging device includes a pixel region in which shared pixels 22 which share pixel transistors in a plurality of photoelectric conversion portions PD are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels 22 are arranged so as to be horizontally reversed or/and vertically crossed, and connection wiring 31A and 31B connected to a floating diffusion portion FD, a source of a reset transistor Tr2 and a gate of an amplification transistor Tr3 in the shared pixels 22 are arranged along the column direction. <P>COPYRIGHT: (C)2011,JPO&INPIT |
