| 摘要 |
Disclosed is an epitaxial wafer wherein dislocation is prevented from being generated even if an LSA process is performed in the device process. The epitaxial wafer is provided with: a wafer main body (11) wherein the nitrogen concentration is set at 1×1012 atoms/cm3 or more or the specific resistance is set at 20 m?·cm or less by boron doping; and an epitaxial layer (12), which is provided on the surface of the wafer main body (11). When the wafer main body (11) is heat-treated at 750°C for four hours, then heat-treated at 1000°C for four hours, a polyhedral oxygen precipitate is dominantly deposited to a board like oxygen precipitate. Since the board-like oxygen precipitate is not easily formed in the device process, the dislocation having the oxygen precipitate as a starting point can be prevented from being generated even if the LSA process is performed after the wafer is subjected to various heat histories in the device process. |
