发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
摘要 |
A semiconductor device includes a GaN-based semiconductor layer formed on a substrate, a gate insulating film that is formed on a surface of the GaN-based semiconductor layer and is made of aluminum oxide, and a gate electrode formed on the gate insulating film, the gate insulating film having a carbon concentration of 2×1020/cm3 or less. |
申请公布号 |
US2011193095(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US201113087945 |
申请日期 |
2011.04.15 |
申请人 |
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
发明人 |
NAKATA KEN;YAEGASHI SEIJI |
分类号 |
H01L29/78;H01L21/20;H01L29/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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