GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH MULTIPLE QUANTUM WELL STRUCTURES HAVING VARYING WELL THICKNESSES
摘要
A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.
申请公布号
WO2011097150(A1)
申请公布日期
2011.08.11
申请号
WO2011US23114
申请日期
2011.01.31
申请人
CREE, INC.;BERGMANN, MICHAEL JOHN;DRISCOLL, DANIEL CARLETON;CHAVAN, ASHONITA;CANTU-ALEJANDRO, PABLO;IBBETSON, JAMES
发明人
BERGMANN, MICHAEL JOHN;DRISCOLL, DANIEL CARLETON;CHAVAN, ASHONITA;CANTU-ALEJANDRO, PABLO;IBBETSON, JAMES