| 摘要 |
The invention concerns a process to treat a structure of semiconductor-on-insulator type structure of a carrier substrate, an oxide layer and a thin layer of a semiconductor material, wherein the structure having a peripheral ring in which the oxide layer is exposed, and the process includes the application of a main thermal treatment in a neutral or controlled reducing atmosphere. The method includes a step to cover at least an exposed peripheral part of the oxide layer, prior to the main thermal treatment, this latter treatment being conducted under controlled time and temperature conditions so as to urge at least part of the oxygen in the oxide layer to diffuse through the thin semiconductor layer, leading to controlled reduction of the thickness of the oxide layer. |
