发明名称 METHOD FOR DESIGN OF SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To prevent the formation of a deep recess in an unintended part when a resist film is exposed and developed. <P>SOLUTION: Layout information indicating the arrangement of four mutually adjacent connecting holes formed on an insulating film is acquired (step S10 and step S20). Whether a quadrilateral using the center of the four connecting holes as an apex is a square or a rectangle and the length (l) of the diagonal of the square or the rectangle satisfies formula (1) l=2&alpha;&lambda;&plusmn;a, &alpha;=1/(2sin&theta;) are decided (step S30). When formula (1) is satisfied, at least one position of the four connecting holes is displaced (step S40). In the formula, &theta; is an angle of incidence of light when the resist film for forming the connecting holes is exposed, &lambda; is the wavelength of the light, and (a) is the diameters of the connecting holes. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011155076(A) 申请公布日期 2011.08.11
申请号 JP20100014643 申请日期 2010.01.26
申请人 RENESAS ELECTRONICS CORP 发明人 ITO KENICHI
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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