| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure free from variations in resistance even when a stress is applied thereto and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device has a metal resistor layer Rm in a region between a passivation film SN12 and an uppermost level aluminum interconnect M. This makes it possible to attain a high-precision resistor having few variations in resistance by a mold stress that occurs in a packaging step or thereafter and therefore, and also makes it possible to form a high-precision analog circuit. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
