发明名称 SEMICONDUCTOR MEMORY DEVICE USING INTERNAL HIGH POWER SUPPLY VOLTAGE IN SELF-REFRESH OPERATION MODE AND RELATED METHOD OF OPERATION
摘要 A semiconductor memory device comprises a memory cell array comprising a plurality of memory banks. The semiconductor memory device performs refresh operations on the memory cell array using a normal refresh operation mode and a self-refresh operation mode. In the normal refresh operation mode, the semiconductor memory device performs refresh operations using an external high power supply voltage, and in the self-refresh operation mode, the semiconductor memory device performs refresh operations using an internal high power supply voltage. In the self-refresh operation mode, the refresh operations are performed in units of memory banks or memory bank groups.
申请公布号 US2011194358(A1) 申请公布日期 2011.08.11
申请号 US20100958663 申请日期 2010.12.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JANG SEOK
分类号 G11C11/406;G11C5/14;G11C7/00 主分类号 G11C11/406
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