摘要 |
A semiconductor memory device comprises a memory cell array comprising a plurality of memory banks. The semiconductor memory device performs refresh operations on the memory cell array using a normal refresh operation mode and a self-refresh operation mode. In the normal refresh operation mode, the semiconductor memory device performs refresh operations using an external high power supply voltage, and in the self-refresh operation mode, the semiconductor memory device performs refresh operations using an internal high power supply voltage. In the self-refresh operation mode, the refresh operations are performed in units of memory banks or memory bank groups.
|