NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having a substrate high in heat radiation capability and small in a crystal defect of a nitride semiconductor layer formed on the substrate, and to provide a method of manufacturing the same.

SOLUTION: A method of manufacturing an HEMT 10 includes: a film formation process of forming a thin film 12 of GaN on a surface of a sapphire substrate 11; a groove formation process of forming a groove at a depth reaching the inside of the sapphire substrate 11 from the upper end of the thin film 12; a growth process of growing a GaN layer 13 using the thin film 12 as a seed crystal after the groove formation process; and a filling process of filling Au as a high-thermal-conductivity material high in thermal conductivity relative to sapphire in the groove 17 before or after the growth process.

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