发明名称 |
METHOD OF FORMING SHALLOW TRENCH ISOLATION STRUCTURE |
摘要 |
An embodiment of the disclosure includes a method of forming a shallow trench isolation structure. A substrate is provided. The substrate includes a top surface. A trench is formed extending from the top surface into the substrate. The trench has sidewalls and a bottom surface. A liner oxide layer is formed on the sidewalls and the bottom surface. The liner oxide layer is treated in a plasma environment comprises at least one of NF3, F2, and BF2. The trench is filled with a dielectric layer.
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申请公布号 |
US2011195559(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US20100703979 |
申请日期 |
2010.02.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN NENG-KUO;TZENG KUO-HWA;TSAI CHENG-YUAN |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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