发明名称 ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR HIGH SPEED TECHNOLOGIES WITH MIXED AND ULTRA-LOW VOLTAGE SUPPLIES
摘要 <p>An electrostatic discharge (ESD) protection circuit (302) in a semiconductor integrated circuit (IC) (100) having protected circuitry. In one embodiment, the ESD protection circuit (302) includes a pad (104), adapted for connection to a protected circuit node of the IC, and an ESD protection device (306), which is coupled between the pad and ground (112). A diode turn-on device (308) is coupled in a forward conduction direction from the pad to a first gate (336) of the ESD protection device. In a second embodiment, the ESD protection circuit (2002) is an SCR having an anode (322) coupled to a first voltage supply line, and a cathode coupled to ground. A parasitic capacitance (2004) is coupled between each the voltage supply line and the grounded cathode</p>
申请公布号 EP1368874(B1) 申请公布日期 2011.08.10
申请号 EP20020725177 申请日期 2002.03.15
申请人 SOFICS BVBA 发明人 MERGENS, MARCUS;VERHAEGE, KOEN;ARMER, JOHN;RUSS, CHRISTIAN
分类号 H01L27/02;H01L27/04;H01L21/822;H01L29/866;H02H3/20;H03K17/0812;H03K17/0814;H03K17/30 主分类号 H01L27/02
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