发明名称 |
ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR HIGH SPEED TECHNOLOGIES WITH MIXED AND ULTRA-LOW VOLTAGE SUPPLIES |
摘要 |
<p>An electrostatic discharge (ESD) protection circuit (302) in a semiconductor integrated circuit (IC) (100) having protected circuitry. In one embodiment, the ESD protection circuit (302) includes a pad (104), adapted for connection to a protected circuit node of the IC, and an ESD protection device (306), which is coupled between the pad and ground (112). A diode turn-on device (308) is coupled in a forward conduction direction from the pad to a first gate (336) of the ESD protection device. In a second embodiment, the ESD protection circuit (2002) is an SCR having an anode (322) coupled to a first voltage supply line, and a cathode coupled to ground. A parasitic capacitance (2004) is coupled between each the voltage supply line and the grounded cathode</p> |
申请公布号 |
EP1368874(B1) |
申请公布日期 |
2011.08.10 |
申请号 |
EP20020725177 |
申请日期 |
2002.03.15 |
申请人 |
SOFICS BVBA |
发明人 |
MERGENS, MARCUS;VERHAEGE, KOEN;ARMER, JOHN;RUSS, CHRISTIAN |
分类号 |
H01L27/02;H01L27/04;H01L21/822;H01L29/866;H02H3/20;H03K17/0812;H03K17/0814;H03K17/30 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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