| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to increase contacting area with a conductive material by forming a plurality of trenches in a plate, thereby minimizing plate noise by uniform contacting and reduced contacting resistance. CONSTITUTION: A semiconductor device manufacturing method is comprised of following procedures. A groove type plate including a plurality of trenches and being short circuited for each MAT(unit memory cell array) on the upper part of a substrate is formed. A conductive material is filled in the trench(13) of the plate. An inter-layer insulating film is formed between the plates short circuited for each MAT.
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