发明名称 |
Threshold device for a memory array |
摘要 |
A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations.
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申请公布号 |
US7995371(B2) |
申请公布日期 |
2011.08.09 |
申请号 |
US20070881473 |
申请日期 |
2007.07.26 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
RINERSON DARRELL;BREWER JULIE CASPERSON;CHEVALLIER CHRISTOPHE J.;KINNEY WAYNE;LAMBERTSON ROY;SCHLOSS LAWRENCE |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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